DSEP 29-12A

DSEP29-12A HiPerFRED VRRM = 1200 V I FAV = 30 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP29-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP29-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VF forward voltage drop min. typ. max. Unit 1200 V V VR = 1200 V TVJ = 25°C 250 µA VR = 1200 V TVJ = 150°C 1 mA TVJ = 25°C 2,75 V 3,30 V 1,81 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 120°C 2,34 V T VJ = 175°C 30 A TVJ = 175°C 1,12 V 16,6 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 12 pF I RM max. reverse recovery current TVJ = 25 °C 8,5 A TVJ = 100°C 13 A t rr reverse recovery time TVJ = 25 °C 60 ns TVJ = 100°C 170 ns rectangular for power loss calculation only 0,9 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,5 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 30 A; VR = 600 V -di F /dt = 200 A/µs 165 200 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20220610d DSEP29-12A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0,4 0,6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSEP29-12A Similar Part DSEP29-12B DSEP30-12A DSEP30-12AR DSEP30-12B Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP29-12A Package TO-220AC (2) TO-247AD (2) ISOPLUS247 (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 477125 Voltage class 1200 1200 1200 1200 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,12 V R0 max slope resistance * 13,3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP29-12A Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP29-12A Fast Diode 70 5 VR = 600 V 60 50 50 4 TVJ = 150°C IF = 60 A 100°C 25°C IF = 60 A 30 30 A 15 A 40 30 A 15 A Qr 3 IF 40 [A] 60 TVJ = 100°C IRM 30 [A] [µC] 2 20 20 1 10 10 0 0 1 2 3 0 100 4 TVJ = 100°C VR = 600 V 0 1000 0 200 -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus VF 220 TVJ = 100°C 100 IF = 60 A 0.8 60 0.6 40 0.4 tfr [µs] [V] IRM 140 QR 80 VFR 30 A 15 A [ns] 160 0.5 1.0 IF = 30 A 1.5 Kf 1.0 20 0.2 trr VFR 0.0 120 0 40 80 120 TVJ [°C] 160 0 0 Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 1000 1.2 VR = 600 V 180 800 120 TVJ = 100°C 200 trr 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 -diF /dt [A/µs] 200 400 600 800 -diF /dt [A/µs] 1000 0 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 0.1 Constants for ZthJC calculation: ZthJC [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.030 0.001 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d